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 Nanoelectronic devices in InGaAs/InP. based on ballistic and quantum effects
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Nanoelectronic devices in InGaAs/InP. based on ballistic and quantum effects

автор Jie S. издательство Книга по Требованию Организация здравоохранения
Cтраниц 84        мягкая обложка       
Аннотация:Materials other than silicon and device principles other than complementary metal-oxide-semiconductor (CMOS) are being investigated. The author hopes the results presented in this book to be a valuable contribution to the nanoelectronic research on InP-based semiconductors. The book should be interesting to semiconductor material scientists, device physicists and electronic engineers. With this background, the present book focuses on nanoelectronic devices in InGaAs/InP based on ballistic and quantum effects. Novel device properties were studied in detail. As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. The book covers mainly three types of devices and their twofold integration: in-plane gate transistors, three-terminal ballistic junctions and quantum dots. The main material studied was a modulation doped InGaAs/InP two-dimensional electron gas.
Автор: Jie S.
Издательство: Книга по Требованию
Год:2009
Цена:
1996 руб
Нет в наличии
Поиск: Nanoelectronic devices in InGaAs/InP. based on ballistic and quantum effects
НОВЫЙ ГОД СИМВОЛ 2013 ГОДАУКРАШЕНИЯ
КАРНАВАЛ НА НОВЫЙ ГОД РАСПРОДАЖА
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