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 Interface properties of amorphous/crystalline silicon heterojunctions. Modeling, experiments and solar cells
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Interface properties of amorphous/crystalline silicon heterojunctions. Modeling, experiments and solar cells

автор Sara O. издательство Книга по Требованию Механика. Динамика
Cтраниц 252        мягкая обложка       
Аннотация:H/c-Si heterointerface and its effect on the subsequent a- Si: H/c-Si HJ solar cell fabrication. Interface recombination modeling by considering the amphoteric nature of Si dangling bonds is in excellent agreement with measurements, and provides insight into the microscopic passivation mechanisms. Alternatively the growth of intrinsic/doped amorphous silicon (a- Si: H) layer stacks on c-Si effectively passivates the c-Si surface and simultaneously forms the emitter and BSF. Solar cells based on monocrystalline silicon (c-Si) can potentially achieve high sunlight energy conversion efficiencies and thus could reach grid parity despite the high cost of c-Si. H/c-Si heterostructures, particularly the electronic quality of the a-Si: The focus of this work is the study of interfaces in a-Si: Such Si heterojunction (HJ) solar cells can use thin c-Si wafers, benefit from low production cost of a-Si: H layers and enable the highest efficiencies. The efficiency of standard c-Si solar cells featuring diffused emitters and aluminum back surface fields (BSF) is limited by interface recombination.
Автор: Sara O.
Издательство: Книга по Требованию
Год:2009
Цена:
3986 руб
Нет в наличии
Поиск: Interface properties of amorphous/crystalline silicon heterojunctions. Modeling, experiments and solar cells



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