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 Simulation Methodology to Compare Alternatives to Silicon Device. Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?
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Simulation Methodology to Compare Alternatives to Silicon Device. Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?

автор Yawei J. издательство Книга по Требованию Прочие виды транспорта
Cтраниц 188        мягкая обложка       
Аннотация:Novel Structures are the most promising candidates for logic devices with sub-20nm gate length. To compare the feasibility of these different structures and to project the device performance, technology CAD (TCAD) simulation is a reasonable method. They can increase gate control and suppress short channel effects. Since it’s impractical for experiments currently, TCAD simulation can be used to project performance goals for aggressively scaled devices. Practical realization of low-power, high-speed transistor technologies for future generation nano- electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials,such as Gallium Nitride (GaN), into Fully-Depleted SOI(FDSOI) transistor architectures. The III-V semiconductors, such as Gallium Nitride (GaN), have high maximum electron drift velocities and ballistic mean free paths, which would enable high-speed transistor operation at very low voltages with gate lengths below 10nm. This research focus on the methodology to compare different technologies for alternative to Silicon based traditional logic device using TCAD simulations.
Автор: Yawei J.
Издательство: Книга по Требованию
Год:2009
Цена:
2783 руб
Нет в наличии
Поиск: Simulation Methodology to Compare Alternatives to Silicon Device. Ultra-thin body single-gate/double-gate,FinFET,tri- gate FDSOI MOSFET,Indium Antimonide MOSFET,Gallium Nitride MOSFET,which is future logic device?
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