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 Novel Structural Polycrystalline Silicon Thin Film Transistor. Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator
Наименование:

Novel Structural Polycrystalline Silicon Thin Film Transistor. Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator

автор Kipling R. (Киплинг Р.) издательство Книга по Требованию Прочие виды транспорта
Cтраниц 192        мягкая обложка       
Аннотация:Otherwise, the poly-Si TFT with/without NH3 annealing and body implantation, and their corresponding effects, have also been investigated and discussed in depth. Furthermore, these novel structures are simple to fabricate, practical, and completely compatible on CMOS technology. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc. . Novel buried-oxide polysilicon thin-film transistors (poly-Si TFTs) are proposed and demonstrated to be superior to their conventional counterparts. This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures.
Автор: Kipling R. (Киплинг Р.)
Издательство: Книга по Требованию
Год:2009
Цена:
2783 руб
Нет в наличии
Поиск: Novel Structural Polycrystalline Silicon Thin Film Transistor. Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator
НОВЫЙ ГОД СИМВОЛ 2013 ГОДАУКРАШЕНИЯ
КАРНАВАЛ НА НОВЫЙ ГОД РАСПРОДАЖА
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