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 DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS
Наименование:

DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs). - AN ANALYTICAL APPROACH

автор Manju K.C. издательство Книга по Требованию Книги
Cтраниц 128        мягкая обложка       
Аннотация:A polynomial represents Fermi-level as a non-linear function of sheet carrier density at the interface of HEMTs. All results show reasonable agreement with the experimental data. Our analytical simulation should be useful in device designing, allowing interactive optimization of device configuration and economically complementing experimental investigations. Using this polynomial, models for finding the temperature dependent gate capacitance, parasitic MESFET dependent transconductance and dc characteristics including self-heating effects were formulated. Owing largely to a high electrical breakdown field, electron sheet charge density, and substrate material with high thermal conductivity, these are capable of handling larger power density signals at high temperatures in unfriendly environments. The effects of spontaneous and piezoelectric polarization fields, have been investigated in detail. The present work involves the analytical modeling of AlGaN/GaN material system based HEMTs. High electron mobility transistor (HEMT) made of compound semiconductors exhibit great potential for high-power applications at RF, microwave, and millimeter-wave frequencies.
Автор: Manju K.C.
Издательство: Книга по Требованию
Год:2010
Цена:
2279 руб
Нет в наличии
Поиск: DEVICE MODELING OF AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTs). - AN ANALYTICAL APPROACH
НОВЫЙ ГОД СИМВОЛ 2013 ГОДАУКРАШЕНИЯ
КАРНАВАЛ НА НОВЫЙ ГОД РАСПРОДАЖА
Ортомолекулярная медицина Orthomol Устрание причин заболеваний. Ортомоль это новый метод для лечения и профилактики болезней. Orthomol - ортомолекулярная медицина.
Неология

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